کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1550444 | 1513123 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cu2ZnSnSe4 thin film solar cells prepared by rapid thermal annealing of co-electroplated Cu-Zn-Sn precursors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
Cu2ZnSnSe4 (CZTSe) thin films were prepared by selenization of co-electrodeposited Cu-Zn-Sn precursors, which were electrodeposited on Mo-coated glass substrates in one-step process. Two annealing processes, rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were carried out for selenizing the precursors at 500 °C. The structure and morphology of the CZTSe thin films were characterized using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). It is found that the RTA process benefits the formation of single phase CZTSe absorbers with large grains and the energy band gap of CZTSe film is 0.98 eV. Photovoltaic cells with the structure of glass/Mo/CZTSe/CdS/i-ZnO/ZnO:Al were fabricated using the RTA-CZTSe films as absorbers. The highest efficiency of 4.5% so far for a co-electrodeposited CZTSe solar cell was achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 94, August 2013, Pages 1-7
Journal: Solar Energy - Volume 94, August 2013, Pages 1-7
نویسندگان
YongZheng Zhang, Cheng Liao, Kai Zong, Hao Wang, JingBing Liu, Tao Jiang, JunFeng Han, GuoQiang Liu, Liang Cui, QinYan Ye, Hui Yan, WoonMing Lau,