Characterization of PIII textured industrial multicrystalline silicon solar cells

Optimized textured structure is one of the most important elements for high efficiency multicrystalline silicon solar cells. In this paper, in order to incorporate low reflectance nanostructures into conventional industrial solar cells, structures with aspect ratios of about 1:1 and average reflectance of 8.0% have been generated using plasma immersion ion implantation. A sheet resistance of 56.9 Ω/sq has been obtained by adjusting the phosphorous diffusion conditions, while the thickness of the silicon nitride vary in 70–80 nm by extending the deposition time by 100 s. Under the conventional co-firing conditions, a solar cell with efficiency of 16.3% and short-circuit current density 34.23 mA/cm2 has been fabricated.

► Nanostructures with aspect ratios of 1:1 and reflectance of 8.0%.
► Poor field-effect passivation results in low Voc.
► Non-uniform silicon nitride layer results in low FF.
► Good antireflection results in high Jsc.
► The solar cell yields efficiency of 16.3% with Jsc of 34.23 mA/cm2.