کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1551126 998116 2011 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Progress in electrodeposited absorber layer for CuIn(1−x)GaxSe2 (CIGS) solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
Progress in electrodeposited absorber layer for CuIn(1−x)GaxSe2 (CIGS) solar cells
چکیده انگلیسی

Thin film solar cells with chalcopyrite CuInSe2/Cu(InGa)Se2 (CIS/CIGS) absorber layers have attracted significant research interest as an important light-to-electricity converter with widespread commercialization prospects. When compared to the ternary CIS, the quaternary CIGS has more desirable optical band gap and has been found to be the most efficient among all the CIS-based derivatives. Amid various fabrication methods available for the absorber layer, electrodeposition may be the most effective alternative to the expensive vacuum based techniques. This paper reviewed the developments in the area of electrodeposition for the fabrication of the CIGS absorber layer. The difficulties in incorporating the optimum amount of Ga in the film and the likely mechanism behind the deposition were highlighted. The role of deposition parameters was discussed along with the phase and microstructure variation of an as-electrodeposited CIGS layer from a typical acid bath. Related novel strategies such as individual In, Ga and their binary alloy deposition for applications in CIGS solar cells were briefed.


► Electrodeposition of CIGS absorber layer was reviewed.
► ncorporating Ga and the likely mechanism were highlighted.
► The role of deposition parameters was discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 85, Issue 11, November 2011, Pages 2666–2678
نویسندگان
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