Electron properties of n- and p-CuInSe2

Using two-temperature synthesis method with the further directed crystallization under the radial and slight horizontal temperature gradients, facilitating the convection and mixing of the melt, the authors obtained monocrystals of n- and p-CuInSe2 with controlled deviation from the stoichiometry using the excess In and Se. We have carried out the measurements of the conductivity and Hall coefficient in the temperature interval 70–415 K and investigated Hall mobility as the function of temperature, determining the dominating carrier scattering mechanisms. It was found that the electrical properties of n- and p-CuInSe2 are caused by the defects of various types depending on the growth conditions and stoichiometry deviations. The energy position of the impurity levels was identified to be 0.055 ± 0.003 eV and 0.022 ± 0.003 eV above the valence band for acceptor levels and 0.010 ± 0.002 eV below the conduction band for the donor level.