Temperature dependence of Cu2ZnSn(SexS1−x)4 monograin solar cells

The temperature dependence of open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and relative efficiency of monograin Cu2ZnSn(SexS1−x)4 solar cell was measured. The light intensity was varied from 2.2 to 100 mW/cm2 and temperatures were in the range of T = 175–300 K. With a light intensity of 100 mW/cm2dVoc/dT was determined to be −1.91 mV/K and the dominating recombination process at temperatures close to room temperature was found to be related to the recombination in the space-charge region. The solar cell relative efficiency decreases with temperature by 0.013%/K. Our results show that the diode ideality factor n does not show remarkable temperature dependence and slightly increases from n = 1.85 to n = 2.05 in the temperature range between 175 and 300 K.