کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1551617 | 998140 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Investigations on electron beam evaporated Cu(In0.85Ga0.15)Se2 thin film solar cells Investigations on electron beam evaporated Cu(In0.85Ga0.15)Se2 thin film solar cells](/preview/png/1551617.png)
CIGS bulk with composition of CuIn0.85Ga0.15Se2 was synthesized by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films were then deposited onto well-cleaned glass substrates using the prepared bulk alloy by electron beam deposition method. The structural properties of the deposited films were studied using X-ray diffraction technique. The as-deposited CIGS films were found to be amorphous. On annealing, the films crystallized with a tetragonal chalcopyrite structure. An intermediate Cu-rich phase precipitated at 200 °C and dissociated at higher annealing temperatures. Average grain size calculated from the XRD spectra indicated that the films had a nano-crystalline structure and was further corroborated by AFM analysis of the sample surface. The chemical constituents present in the deposited CIGS films were identified using energy dispersive X-ray analysis. CIGS based solar cells were then fabricated on molybdenum and ITO coated glass substrates and the efficiencies have been evaluated.
Journal: Solar Energy - Volume 83, Issue 9, September 2009, Pages 1652–1655