کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1551865 998152 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Capacitive load based on IGBTs for on-site characterization of PV arrays
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
Capacitive load based on IGBTs for on-site characterization of PV arrays
چکیده انگلیسی

This paper describes the practical design of a portable capacitive load based on insulated gate bipolar transistors (IGBTs), which is used to measure the I–V characteristics of PV arrays with short-circuit currents up to 80 A and open circuit voltages up to 800 V. Such measurement allows on-site characterization of PV arrays under real operating conditions and also provides information for the detection of potential array anomalies, such as broken cells or defective connections. The presented I–V load is easy to reproduce and low-cost, characteristics that are within the reach of small-scale organizations involved in PV electrification projects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 80, Issue 11, November 2006, Pages 1489–1497
نویسندگان
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