Advances in ion beam modification of semiconductors

• An overview of the current status of ion-implantation research in semiconductors.
• Overview of developments in ion-implantation of silicon.
• Review of doping, radiation damage and annealing processes in Ge and SiC, GaN and ZnO.

This review provides an overview of the current status of ion-implantation research in silicon, germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon includes recent developments in metrology and device simulation, as well as a brief discussion of emerging applications in photovoltaics and quantum electronics. That of Ge includes a more detailed overview of doping, radiation damage and annealing processes due to the renewed research interest in this material. Finally, the discussion of compound semiconductors focuses on the newer wide bandgap materials where there are remaining implantation issues to be solved and potentially new implantation applications emerging.