کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555608 1513667 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spin drift–diffusion transport and its applications in semiconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد شیمی مواد
پیش نمایش صفحه اول مقاله
Spin drift–diffusion transport and its applications in semiconductors
چکیده انگلیسی

We study theoretically the propagation and distribution of electron spin density in semiconductors within the drift–diffusion model in an external electric field. From the solution of the spin drift–diffusion equation, we derive the expressions for spin currents in the down-stream (DS) and up-stream (US) directions. We find that drift and diffusion currents contribute to the spin current and there is an electric field, called the drift–diffusion crossover field, where the drift and diffusion mechanisms contribute equally to the spin current in the DS direction, and that the spin current in the US direction vanishes when the electric field is very large. We calculate the drift–diffusion crossover field and show that the intrinsic spin diffusion length in a semiconductor can be determined directly from it if the temperature, electron density and both the temperature and electron density, respectively, are known for nondegenerate, highly degenerate and degenerate systems. The results will be useful in obtaining transport properties of the electron’s spin in semiconductors, the essential information for spintronic technology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Opinion in Solid State and Materials Science - Volume 13, Issues 5–6, October–December 2009, Pages 99–104
نویسندگان
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