کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555829 | 999155 | 2015 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
شیمی مواد
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چکیده انگلیسی
The high electron mobility has granted indium arsenide (InAs) nanowires (NWs) as an important class of nanomaterials for high performance electronics such as field-effect transistors (FETs). We reviewed recent progresses on the studies of quantum coherence, gate tunable one-dimensional (1D) confinement and spin orbit interaction (SOI) in InAs NW based electronic and thermoelectric transport devices. We also demonstrated gas sensing response of InAs NW FETs and elucidated the mechanism via a gating experiment. By using InAs NWs as an example, these fundamental transport studies have shed important lights on the potential thermoelectric, spintronic and gas sensing applications of semiconductor NWs where the 1D confinement, SOI or surface states effects are exploited.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Science & Technology - Volume 31, Issue 6, June 2015, Pages 542-555
Journal: Journal of Materials Science & Technology - Volume 31, Issue 6, June 2015, Pages 542-555
نویسندگان
Dong Liang, Juan Du, Xuan P.A. Gao,