Fabrication and Characterization of Undoped and Cobalt-doped ZnO Based UV Photodetector Prepared by RF-sputtering

Undoped and 1 at.% Co-doped ZnO nanostructure based UV photodetectors were successfully fabricated by RF-magnetron sputtering technique with comb like Pt electrodes. Cobalt ions were successfully incorporated into the lattice of the ZnO nanostructure without changing its wurtzite structure. It was indicated that Co-doping can effectively adjust the luminescence properties of the ZnO nanostructure. The undoped and Co-doped ZnO photodetectors were observed to have photosensitivities of 1.44 × 104 % and 8.57 × 102 % and low dark currents of 9.74 × 10−8 A and 1.18 × 10−7 A, respectively.