کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1556288 | 999181 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing Effect of ZnO on the Performance of Inverted Organic Photovoltaic Devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
شیمی مواد
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Annealing Effect of ZnO on the Performance of Inverted Organic Photovoltaic Devices Annealing Effect of ZnO on the Performance of Inverted Organic Photovoltaic Devices](/preview/png/1556288.png)
چکیده انگلیسی
ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Ag, in which ZnO film served as an electron selective layer. The effects of annealing temperature of ZnO film on the device performance were investigated. When the annealing temperature was 300 °C, a well-arranged ZnO thin film was obtained, and the optimized device had doubled short circuit current density (JSC) and seven-fold higher power conversion efficiency (PCE) compared to the devices without ZnO film. This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier. At particularly high annealing temperature, dramatically increased sheet resistance of indium tin oxide (ITO) was found to cause PCE deterioration. Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic (OPV) performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Science & Technology - Volume 30, Issue 2, February 2014, Pages 197-202
Journal: Journal of Materials Science & Technology - Volume 30, Issue 2, February 2014, Pages 197-202
نویسندگان
Wenjing Qin, Guojing Ding, Xinrui Xu, Liying Yang, Shougen Yin,