کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1556415 | 999188 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
n-type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
شیمی مواد
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
For photovoltaic applications, low-cost SiNx-coated metallurgical grade silicon (MG-Si) wafers were used as substrates for polycrystalline silicon (poly-Si) thick films deposition at temperatures ranging from 640 to 880 °C by thermal chemical vapor deposition. X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 °C. To obtain n-type poly-Si, the as-deposited poly-Si films were annealed at 880 °C capped with a phosphosilicate glass. Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements. The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 Ã 1019 cmâ3 and 68.1 cm2 Vâ1 sâ1, respectively. High-quality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Science & Technology - Volume 31, Issue 1, January 2015, Pages 65-69
Journal: Journal of Materials Science & Technology - Volume 31, Issue 1, January 2015, Pages 65-69
نویسندگان
Hongliang Zhang, Liqiang Zhu, Liqiang Guo, Yanghui Liu, Qing Wan,