کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1557030 | 999224 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
شیمی مواد
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چکیده انگلیسی
The structural property of GaSb epilayers grown on semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using Triethylgallium (TEGa) and trimethylantimony (TMSb), was investigated by variation of the Sb:Ga (V/III) ratio. An optimum V/III ratio of 1.4 was determined in our growth conditions. Using transmission electron microscopy (TEM), we found that there was an interfacial misfit dislocations (IMF) growth mode in our experiment, in which the large misfit strain between epilayer and substrate is relaxed by periodic 90 deg. IMF array at the hetero-epitaxial interface. The rms roughness of a 300 nm-thick GaSb layer is only 2.7 nm in a 10 μmÃ10 μm scan from atomic force microscopy (AFM) result. The best hole density and mobility of 300 nm GaSb epilayer are 5.27Ã106 cmâ3(1.20à 106) and 553 cm2·Vâ1·sâ1 (2340) at RT (77 K) from Hall measurement, respectively. These results indicate that the IMF growth mode can be used in MOCVD epitaxial technology similar to molecular beam epitaxy (MBE) technology to produce the thinner GaSb layer with low density of dislocations and other defects on GaAs substrate for the application of devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Science & Technology - Volume 28, Issue 2, February 2012, Pages 132-136
Journal: Journal of Materials Science & Technology - Volume 28, Issue 2, February 2012, Pages 132-136
نویسندگان
Wei Zhou, Xiang Li, Sujing Xia, Jie Yang, Wu Tang, K.M. Lau,