کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1560842 | 1513928 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principles study of oxygen and aluminum defects in β-Si3N4: Compensation and charge trapping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
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چکیده انگلیسی
Formation energies for oxygen and aluminum defects in hexagonal silicon nitride (β-Si3N4) were calculated from first-principles. Aluminum induces a deep donor level at the thermodynamically preferred interstitial site. Oxygen donors substituted into lattice nitrogen sites are found to ionize at 3.5 eV above the valence band and might readily compensate acceptor levels induced by native silicon micro-cluster defects. This is rationalized by examining the electronic structure of a model Si micro-cluster defect, and of the oxygen substitutional impurity. Specifically, this article describes the influence of oxygen and aluminum impurities on the number of states available for electron capture in silicon nitride as trapping layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 81, January 2014, Pages 178-183
Journal: Computational Materials Science - Volume 81, January 2014, Pages 178-183
نویسندگان
Maria Elena Grillo, Simon D. Elliott, Jesús RodrÃguez, Rafael Añez, David Santiago Coll, Amit Suhane, Leurent Breuil, Antonio Arreghini, Robin Degraeve, Ahmed Shariq, Volkhard Beyer, Malte Czernohorsky,