Overall elastic domain of thin polysilicon films

► Homogenized properties are obtained for polycrystalline microstructures, generated in a RVE through Voronoi tessellations. ► Three sources of dissipation are allowed for: (i) trans-granular cracking; (ii) inter-granular failure; (iii) trans-granular phase transformation. ► Corners in the overall elastic domain arise because of switching among the three failure modes. ► To get objective overall polysilicon properties, the RVE has to gather a few hundreds of grains.