کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1562545 | 999590 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure of InxGa1âxAsySb1ây alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
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چکیده انگلیسی
Electronic band structures and elastic properties of III-V quaternary InxGa1âxAsySb1ây alloys are presented following the empirical pseudopotential method. The alloying effects are modelled through the modified virtual crystal approximation. Calculations are also performed to report the density of states, refractive index, and ionicity factors. Among elastic properties the elastic constants and bulk modulus are reported. The electronic structure, optical and elastic properties are reported for the In0.25Ga0.75As0.25Sb0.75, In0.25Ga0.75As0.75Sb0.25, In0.75Ga0.25As0.25Sb0.75 and In0.75Ga0.25As0.75Sb0.25 compositions. Dependence of the band gap, refractive index and the ionicity with the cationic and anionic compositions are discussed. The results are compared with the available theoretical and experimental data of lattice matched compounds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 49, Issue 4, Supplement, October 2010, Pages S246-S250
Journal: Computational Materials Science - Volume 49, Issue 4, Supplement, October 2010, Pages S246-S250
نویسندگان
K.B. Joshi, N.N. Patel, C.B. Swarnkar, U. Paliwal,