کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1562910 | 999599 | 2009 | 5 صفحه PDF | دانلود رایگان |
Thermal-conductivity and axial tension of single-wall BN (Boron Nitride), SiC (Silicon Carbide) and Ge (Germanium) nanotubes are simulated through the MD (Molecular Dynamics) method, and the conductivity-temperature and loading-strain curves of the nanotubes are given. According to the obtained results, the differences of the nanotubes in thermal-conductivity and tensile-properties are investigated. The results show that the thermal-conductivity of all the tubes decreases with the increase of temperature and diameter; at the same temperature the BN tube has the best thermal-conductivity, whereas the SiC and Ge tubes have the comparable one; the Ge tube has both the worst anti-deformation and anti-loading capability, the BN tube the best anti-deformation one, and the BN and SiC tubes the comparable anti-loading one.
Journal: Computational Materials Science - Volume 47, Issue 1, November 2009, Pages 220–224