کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1563322 999607 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Kinetic Monte Carlo simulation of {1 1 1}-oriented SiC film with chemical vapor deposition
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
Kinetic Monte Carlo simulation of {1 1 1}-oriented SiC film with chemical vapor deposition
چکیده انگلیسی

A three-dimensional atomic-scale kinetic Monte Carlo (KMC) model of {1 1 1}-oriented SiC film deposited by chemical vapor deposition is established in this paper. The growth process of {1 1 1}-oriented atomic-scale SiC film is simulated. The model includes two parts: the first is kinetic process of chemical reaction and the second is deposition and diffusion of substrate surface. In this model, the relationship between temperature and growth rate, surface roughness and relative density and the relationship between growth rate and surface roughness and relative density are studied. The result indicates that the growth of film has three stages including formation of little islets, mergence and expanding of islets and dynamic balance between islets. With increase of substrate temperature, deposition rate, surface roughness and height of film all increase. With increase of deposition rate, surface roughness increases while relative density decreases.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 43, Issue 4, October 2008, Pages 1036–1041
نویسندگان
, , , ,