Optical and electrical properties of γ irradiated In1-xMnxSe

In1-x MnxSe thin films prepared by thermal evaporation technique. The effect of γ-irradiation on the optical and the electrical properties were studied. The optical parameters were calculated from the transmittance and reflectance. The absorption coefficient decreased with increasing the γ-irradiation doses. The direct allowed band gap increased as the γ-irradiation doses increased. As the γ-irradiation increased the electrical conductivity and the activation energy decreased.