کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1571726 | 1000652 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of GaN nanowires on Pd-coated sapphire substrates by magnetron sputtering technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Large-scale GaN nanowires were successfully synthesized through ammoniating Ga2O3/Pd films sputtered on the sapphire(001) substrates. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and Raman spectrum were used to characterize the specimens. The results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. Raman scattering appears broadened and asymmetric compared with those of bulk GaN due to its polycrystalline nature. In addition, the growth mechanism of GaN nanowires is briefly discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 61, Issue 4, April 2010, Pages 381–385
Journal: Materials Characterization - Volume 61, Issue 4, April 2010, Pages 381–385
نویسندگان
Y.F. Guo, C.S. Xue, W.J. Liu, H.B. Sun, Y.P. Cao,