کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1572554 | 1000687 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transparent conductive oxide tungsten-doped tin oxide thin films were deposited on glass substrates from ceramic targets by the pulsed plasma deposition method. The structural, electrical and optical properties have been investigated as functions of tungsten doping content and oxygen partial pressure. The lowest resistivity of 2.1 × 10− 3 Ω∙cm was reproducibly obtained, with carrier mobility of 30 cm2V− 1s− 1 and carrier concentration of 9.6 × 1019 cm− 3 at the oxygen partial pressure of 1.8 Pa. The average optical transmission was in excess of 80% in the visible region from 400 to 700 nm, with the optical band gap ranging from 3.91 to 4.02 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 60, Issue 5, May 2009, Pages 415–419
Journal: Materials Characterization - Volume 60, Issue 5, May 2009, Pages 415–419
نویسندگان
Yanwei Huang, Qun Zhang, Guifeng Li, Ming Yang,