کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1575922 | 1514759 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of a high magnetic field on the microstructure and properties of a Cu-Fe-Ag in situ composite
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of a high magnetic field on the microstructure and properties of a Cu-Fe-Ag in situ composite Influence of a high magnetic field on the microstructure and properties of a Cu-Fe-Ag in situ composite](/preview/png/1575922.png)
چکیده انگلیسی
The influence of a magnetic field during heat treatments was studied for a deformation-processed Cuâ14Feâ0.1Ag in situ composite produced by thermo-mechanical processing. A high magnetic field during initial heat treatment promoted the spheroidization and refinement of Fe dendrites, and decreased the diffusion activation energy of Fe atoms in the Cu matrix, which promoted Fe atom precipitation. The resultant in situ composite had thinner Fe fibers, higher tensile strength and better conductivity. A high magnetic field during intermediate heat treatment increased the conductivity and tensile strength. The strength, conductivity and elongation to fracture of a Cuâ14Feâ0.1Ag in situ composite could be improved simultaneously using a high magnetic field during the initial, intermediate and final heat treatment. The following combination of properties could be produced by the Cuâ14Feâ0.1Ag in situ composite at η=7.8 after isochronic aging for 1 h using 10 T magnetic induction intensity: (i) 1149 MPa tensile strength, 60.3% IACS conductivity and 3.3% elongation; or (ii) 1093 MPa, 61.9% IACS and 3.5%; or (iii) 1006 MPa, 63.7% IACS and 3.7%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 584, 1 November 2013, Pages 114-120
Journal: Materials Science and Engineering: A - Volume 584, 1 November 2013, Pages 114-120
نویسندگان
K.M. Liu, D.P. Lu, H.T. Zhou, Z.B. Chen, A. Atrens, L. Lu,