کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1576940 | 1514791 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of removal of silicon on preparation of porous SiC ceramics following reaction bonding and recrystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Porous α-SiC ceramics with distributed pore structure were prepared by recrystallization method using silicon as the template. The microstructure evolution of this material (sintered at 2100 °C) was investigated by varying particle size of the silicon powders (3.5 μm and 37 μm). The results demonstrated that finer silicon powder could strengthen grain growth along close-packed directions and made the material easily to form plate-like SiC crystals. Pore diameter was mainly controlled by silicon raw powder when the silicon had a greater median diameter value than the SiC powder. In this study, grain growth was determined by a mixed mechanism during silicon removing. The porosity increased with the increasing of silicon contents while the strength was in a reverse proportional relationship. High porosity ceramics with relative high strength, which were sintered at 2100 °C for 15 min, were obtained using 3.5 μm silicon powder as the template.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 552, 30 August 2012, Pages 9-14
Journal: Materials Science and Engineering: A - Volume 552, 30 August 2012, Pages 9-14
نویسندگان
Rongzhen Liu, Guiwu Liu, Jianfeng Yang, Haiyun Jin, Yuan Lu, Wenwei Gu,