کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1581569 | 1514863 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oscillation behavior of a high-temperature silicon droplet by the electromagnetic levitation technique superimposed with a static magnetic field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Oscillation behavior of a high-temperature silicon droplet by the electromagnetic levitation technique superimposed with a static magnetic field Oscillation behavior of a high-temperature silicon droplet by the electromagnetic levitation technique superimposed with a static magnetic field](/preview/png/1581569.png)
چکیده انگلیسی
When a static magnetic field was applied to a Si droplet levitated by an electromagnetic force, only one peak was observed to remain in the frequency spectrum. It was the objective of this work to clarify whether this peak can be assigned to the m = ± 2 oscillation or to the rotation of the droplet. By analyzing the behavior of the deflection angle of the droplet in a top view, we conclude that this peak is not due to the surface oscillation of the droplet but to the droplet rotation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 495, Issues 1–2, 15 November 2008, Pages 50–53
Journal: Materials Science and Engineering: A - Volume 495, Issues 1–2, 15 November 2008, Pages 50–53
نویسندگان
S. Ozawa, N. Takenaga, T. Koda, T. Hibiya, H. Kobatake, H. Fukuyama, M. Adachi, M. Watanabe, S. Awaji,