Toward a physical model for strain hardening in fcc crystals

A model is presented in condensed form for the strain hardening of fcc crystals. It is based on a version of the storage–recovery frame in terms of average dislocation densities per slip systems. The number of free parameters appearing in the model is reduced as much as possible with the help of dislocation dynamics simulations. The final set of coupled equations is solved using a crystal plasticity code. Preliminary results are presented and the limits of the model are discussed.