Plasma active sintering of silicon carbide

Silicon carbide (SiC) ceramics were fabricated by plasma-activated sintering. The sintering was accomplished at relatively low temperatures within a short time. The grain growth of the SiC ceramics was considerably inhibited, and finally SiC ceramics with a higher bending strength (853.7 MPa) and fracture toughness (8.34 MPa m1/2) could be fabricated.