کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1583047 | 1514881 | 2008 | 6 صفحه PDF | دانلود رایگان |
Thermal aspects are becoming increasingly important for the reliability of the electronic components due to the continuous progress of the electronic industries. Therefore, the effective thermal management is a key issue for packaging of high performance semiconductors. The ideal material working as heat sink and heat spreader should have a CTE of (4–8) × 10−6 K−1 and a high thermal conductivity. Metal matrix composites offer the possibility to tailor the properties of a metal by adding an appropriate reinforcement phase and to meet the demands in thermal management.Copper/SiC and copper/diamond composites have been produced by powder metallurgy. The major challenge in development of Cu/SiC is the control of the interfacial interactions. Silicon carbide is not stable in copper at the temperature needed for the fabrication of Cu/SiC. It is known that the bonding between diamond and copper is very weak in the Cu/diamond composite. Improvements in bonding strength and thermo-physical properties of the composites have been achieved by
• a vapour deposited molybdenum coating on SiC powders to control interface reactions,
• using atomized Cu(X) alloys with minor additions of carbide formers, e.g. X = Cr, B, to improve the interfacial bonding in Cu-diamond composites.
Journal: Materials Science and Engineering: A - Volume 475, Issues 1–2, 25 February 2008, Pages 39–44