کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1583423 | 1514892 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of hydrogen implantation on semiconductor-metal transition and high-pressure thermopower in Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present work Czochralski-grown silicon single crystals were investigated implanted with different doses of H+ ions. The Si wafers were characterized by the Raman scattering technique. Thermoelectric power was studied in a pressure range of 0-20 GPa of p-type Si single crystal wafers containing a thin hydrogenated layer consisting of amorphous Si, nanocrystalline Si and H-rich Si layers. In the region of the pressure-induced phase transition from the initial semiconductor diamond-like into the metal β-Sn lattice, a lowering of thermopower values was noticed in comparison with ones of p-Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 462, Issues 1â2, 25 July 2007, Pages 343-346
Journal: Materials Science and Engineering: A - Volume 462, Issues 1â2, 25 July 2007, Pages 343-346
نویسندگان
Sergey V. Ovsyannikov, Vladimir V. Shchennikov, Irina V. Antonova, Vsevolod V. Jr., Yuri S. Ponosov,