کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1584129 | 1514899 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlled doping of single crystalline diluted magnetic semiconductor Ga1âxMnxN nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlled doping of single crystalline diluted magnetic semiconductor Ga1âxMnxN nanowires Controlled doping of single crystalline diluted magnetic semiconductor Ga1âxMnxN nanowires](/preview/png/1584129.png)
چکیده انگلیسی
We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1âxMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1âxMnxN nanowires with x > 0.04.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volumes 452â453, 15 April 2007, Pages 499-502
Journal: Materials Science and Engineering: A - Volumes 452â453, 15 April 2007, Pages 499-502
نویسندگان
Yun-Ki Byeun, Kyong-Sop Han, Heon-Jin Choi, Sung-Churl Choi,