کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1584670 1514906 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anelasticity study on electromigration effect in Cu thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Anelasticity study on electromigration effect in Cu thin films
چکیده انگلیسی

Electromigration (EM) tests on Cu thin film circuits below or near 373 K with the current density between 1 × 109 A/m2 and 8 × 109 A/m2 were carried out by means of the composite vibrating reed method. The resonant frequency (f) and the internal friction (Q−1) of the composite reed and the resistivity (R) of the thin film circuit were measured during isothermal EM tests for as deposited Cu/Ta films, Cu/Ta films annealed at 450 K and as deposited Ta/Cu/Ta films. An increase in f, a decrease in Q−1 and a decrease in R were commonly observed. The activation energies found for the EM process (EEM) range between 0.21 and 0.41 eV for the as deposited Cu/Ta films, between 0.21 and 0.59 eV for the annealed Cu/Ta films and around 0.3 eV for as deposited Ta/Cu/Ta films. It is suggested that a previously unrecognized mass transport process with low EEM operates in these Cu thin films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 442, Issues 1–2, 20 December 2006, Pages 342–346
نویسندگان
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