Characterization of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering

Ba(SnxTi1−x)O3 (BSxT1−x) thin films prepared by radio frequency (RF) magnetron sputtering in a mixture of O2/Ar atmosphere have been characterized as a function of RF power. The BSxT1−x thin films are amorphous when sputtered at RF power = 100 and 125 W. The XRD shows only single perovskite structure phase of BaTiO3. The intensity of reflection increases with RF power increases from 125 to 175 W. The BSxT1−x thin films sputtered with RF power at 150 W produced maximum deposition. The effect of the RF power on the Sn/(Sn + Ti) ratio is not significant. The refractive index of the BSxT1−x thin films increases with increasing RF power. The dielectric constant of the BSxT1−x thin films increases with increasing Sn content for films sputtered at the same RF power. On the other hand, the dielectric constant of the BSxT1−x thin films increases when the RF power is increased from 100 to 150 W, but the dielectric constant decreases for RF power greater than 150 W.