Annealing behavior of Zr702 fabricated by ECAP

The annealing behavior in Zr702 processed by equal channel angular pressing (ECAP) was investigated. ECAP was carried out at room temperature with the sample rotated 90 ° in the same sense in each pass. The annealing of ECAP’ed Zr702 was performed at the temperature of above recrystallization. The four passes developed deformation twins and a high dislocation density in grains exhibits. Full recrystallization occurred with annealing at 873 K for 10 min with a recrystallized grain size of ∼ 3 μm. The kinetics of grain growth of ECAP’ed Zr702 was analyzed by the non-ideal grain growth law. The grain growth exponents of Zr702 at temperatures of 873, 973 and 1073 K were 0.12, 0.24 and 0.24, respectively. The activation energy for grain growth was 134 kJ mol−1.