کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590779 | 1515465 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tip preparation for usage in an ultra-low temperature UHV scanning tunneling microscope
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This work deals with the preparation and characterization of tungsten tips for the use in UHV low-temperature scanning tunneling microscopy and spectroscopy (STM and STS, respectively). These specific environments require in situ facilities for tip conditioning, for further sharpening of the tips, as well as for reliable tip characterization. The implemented conditioning methods include direct resistive annealing, annealing by electron bombardment, and self-sputtering with noble gas ions. Moreover, results from in situ tip characterization by field emission and STM experiments were compared to ex situ scanning electron microscopy. Using the so-prepared tips, high resolution STM images and tunneling spectra were obtained in a temperature range from ambient down to 350Â mK, partially with applied magnetic field, on a variety of materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 8, Issue 5, July 2007, Pages 347-351
Journal: Science and Technology of Advanced Materials - Volume 8, Issue 5, July 2007, Pages 347-351
نویسندگان
S. Ernst, S. Wirth, M. Rams, V. Dolocan, F. Steglich,