Formation of silicon dioxide layers at low temperatures (150-400 °C) by atmospheric pressure plasma oxidation of silicon

The formation of silicon dioxide (SiO2) layers at low temperatures (150-400 °C) by atmospheric pressure plasma oxidation of Si(0 0 1) wafers have been studied using a gas mixture containing He and O2. A 150 MHz very high frequency (VHF) power supply was used to generate high-density atomic oxygen in the atmospheric pressure plasma. Oxidation rate, structure, and thickness and refractive index profiles of the oxidized layers were investigated by ellipsometry and infrared absorption spectroscopy. Atomic force microscopy was also employed to observe atomic-scale morphologies of the layer surface and wafer Si surface, after chemical removal of the oxidized layers. It was found that stoichiometric SiO2 layers were obtained at higher oxidation rates than conventional dry O2 thermal oxidation and radical oxidation processes, even at a very low substrate temperature of 150 °C. Although thickness variations were observed in the plasma region, the refractive index was independent of both substrate temperature and VHF power. In addition, the SiO2 surface and SiO2/Si interface roughnesses were comparable to those obtained in conventional dry oxidation at high temperatures.