کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590828 | 1515476 | 2006 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theory of diluted magnetic semiconductors: A minimal model
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this article we review our recent theoretical studies on the carrier induced ferromagnetism of DMS. We propose a minimal model, which is composed of a single tight-binding band of carriers and magnetic impurities, which randomly substitute the host sites. Both of nonmagnetic attractive potentials due to impurities and the exchange interactions between carrier and impurity spins are taken into account. We apply the coherent potential approximation in studying this system. The obtained phase diagrams illustrate the characteristic features of the carrier induced ferromagnetism in DMS. The role of nonmagnetic interaction for the enhancement of the Curie temperature is clarified. The results suggest that the ferromagnetism in Ga1âxMnxAs is caused by a double-exchange-like mechanism mediated by valence band holes. We also report the results of numerical simulations of the model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 7, Issue 1, January 2006, Pages 31-41
Journal: Science and Technology of Advanced Materials - Volume 7, Issue 1, January 2006, Pages 31-41
نویسندگان
Kazushi Kagami, Masao Takahashi, Chitoshi Yasuda, Kenn Kubo,