کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590951 | 1515477 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure of superconducting InN
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
We report on an investigation of superconductivity in n-type InN. There is an optimum carrier density for the occurrence of the superconductivity. The lowest carrier density is limited by the Mott transition of neâ¼2Ã1017cm-3 and the highest density is limited by the superconductor to insulator transition of neâ¼5Ã1020cm-3. We propose a mechanism where the occurrence of the superconductivity is related to the presence of In-In chains of finite length in the ab plane. The In-In chains, which originate from the inversion domains of InN grown on sapphire (0 0 0 1) and elongate along [112¯0], are coupled to form micro Josephson-junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 7, Supplement 1, August 2006, Pages S112-S116
Journal: Science and Technology of Advanced Materials - Volume 7, Supplement 1, August 2006, Pages S112-S116
نویسندگان
Takashi Inushima,