کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590969 | 1515471 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
To realize high-performance silicon carbide (SiC) power devices, low-resistance ohmic contacts to p-type SiC must be developed. To reduce the ohmic contact resistance, reduction of the barrier height at metal/SiC interfaces or increase in the doping concentration in the SiC substrates is needed. Since the reduction of barrier height is extremely difficult, the increase in the Al doping concentration in 4H-SiC by an ion-implantation technique was challenged. The Ti/Al and Ni/Ti/Al metals (where a slash “/” sign indicates the deposition sequence) were deposited on the Al ion-implanted SiC substrates. By comparing the experimental and theoretical contact resistances, the current transport mechanism through the metal/SiC interfaces was concluded to be thermionic field emission and the barrier height was determined to be â¼0.4Â eV. Although the hole concentration increased with increasing the Al doping concentration in 4H-SiC, the barrier height at metal/SiC interfaces increased due to high density of dislocation loops observed in the implanted SiC layers by transmission electron microscopy. The present experiments suggested that the low-resistance ohmic contacts would be formed when a technique to eliminate the crystal defects formed in the 4H-SiC substrates after ion implantation was developed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 7, Issue 6, September 2006, Pages 496-501
Journal: Science and Technology of Advanced Materials - Volume 7, Issue 6, September 2006, Pages 496-501
نویسندگان
Kazuhiro Ito, Susumu Tsukimoto, Masanori Murakami,