Separation of inverse spin hall effect and spin rectification effect by inverting spin injection direction in NiFe/ta bilayers film

• ISHE is separated from SRE by inverting spin injection direction in NiFe/Ta bilayer.
• The voltage of NiFe/Ta bilayer is different before and after flipping.
• The voltage in NiFe monolayer does not vary before and after the flipping.
• SRE and ISHE can be quantitatively calculated by summation and substraction.

The inverse spin Hall effect (ISHE) has been detected and separated from spin rectification effect (SRE) by inverting spin injection direction in metallic system. This work is based on the relation between the two effects and the spin injection direction: the sign of VISHE changes because of the reversing direction of spin injection while the VSRE is independent on it. According to the different voltage signals before and after the spin injection inverted, the pure VISHE and VSRE are calculated by utilizing the method of addition and subtraction. The signals can be separated in a wide range of frequency and power.