کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1591296 1515572 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3−ySeyBi2−xSbxTe3−ySey
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3−ySeyBi2−xSbxTe3−ySey
چکیده انگلیسی


• High-field magnetotransport has been measured on the topological insulator BSTS.
• Shubnikov-de Haas oscillations of the topological surface states are observed.
• The topological Berry phase is extracted from the Landau level plot.
• Band parameters of BSTS are determined by ARPES.

We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi2−xSbxTe3−ySey. Monochromatic Shubnikov–de Haas (SdH) oscillations are observed at 4.2 K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With the help of Lifshitz–Kosevich theory, important transport parameters of the surface states are obtained, including the carrier density, cyclotron mass and mobility. For (x,y)=(0.50,1.3)(x,y)=(0.50,1.3) the Landau level plot is analyzed in terms of a model based on a topological surface state in the presence of a non-ideal linear dispersion relation and a Zeeman term with gs=70 or −54−54. Input parameters were taken from the electronic dispersion relation measured directly by angle resolved photoemission spectroscopy on crystals from the same batch. The Hall resistivity of the same crystal (thickness of 40 μm) is analyzed in a two-band model, from which we conclude that the ratio of the surface conductance to the total conductance amounts to 32%.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 227, February 2016, Pages 13–18
نویسندگان
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