کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1591444 | 1515582 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCu3Ti4O12 (CCTO). Experimental results have revealed that Cu 3d-O 2p hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated into the upper Hubbard band at ~1.5Â eV and the lower Hubbard band at ~â1.7Â eV with a band gap of ~1.5-1.8Â eV. We also observed that Cu 3d peak at ~â3.8Â eV and Ti 3d peak at ~3.8Â eV are further away from each other than as indicated in the LDA calculations. In addition, it is found that the multiplet structure around â9Â eV includes a considerable number of O 2p states. These observations indicate that the Cu 3d and Ti 3d electrons hybridized with the O 2p states are strongly correlated, which originates in the Mott-insulating states of CCTO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 217, September 2015, Pages 17-20
Journal: Solid State Communications - Volume 217, September 2015, Pages 17-20
نویسندگان
H.J. Im, M. Iwataki, S. Yamazaki, T. Usui, S. Adachi, M. Tsunekawa, T. Watanabe, K. Takegahara, S. Kimura, M. Matsunami, H. Sato, H. Namatame, M. Taniguchi,