کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1591444 1515582 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study
چکیده انگلیسی
We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCu3Ti4O12 (CCTO). Experimental results have revealed that Cu 3d-O 2p hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated into the upper Hubbard band at ~1.5 eV and the lower Hubbard band at ~−1.7 eV with a band gap of ~1.5-1.8 eV. We also observed that Cu 3d peak at ~−3.8 eV and Ti 3d peak at ~3.8 eV are further away from each other than as indicated in the LDA calculations. In addition, it is found that the multiplet structure around −9 eV includes a considerable number of O 2p states. These observations indicate that the Cu 3d and Ti 3d electrons hybridized with the O 2p states are strongly correlated, which originates in the Mott-insulating states of CCTO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 217, September 2015, Pages 17-20
نویسندگان
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