کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1591497 | 1515583 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm has been investigated. We have found that the scaling relationship between longitudinal (Ïxx) and anomalous Hall (ÏAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship ÏAHâÏxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volumes 215â216, July 2015, Pages 5-11
Journal: Solid State Communications - Volumes 215â216, July 2015, Pages 5-11
نویسندگان
Yan Zhang, Wenbo Mi, Xiaocha Wang, Zaibing Guo,