کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1591642 1515591 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Aharonov Bohm effect in 2D topological insulator
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Aharonov Bohm effect in 2D topological insulator
چکیده انگلیسی

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov–Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 205, March 2015, Pages 4–8
نویسندگان
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