Multi-bit nonvolatile logic implemented with metal-oxide based resistive switching device

• A HfOx based multi-bit nonvolatile logic devices is proposed.
• Multi-level resistive switching is demonstrated on the Gd:HfOx device.
• The devices are demonstrated to exhibit both multi-bit computing and self-data storage functions.
• Innovative operation schemes are developed to achieve the functions of computing and data storage.
• A two-bit nonvolatile adder is demonstrated based on the device.

A material-oriented methodology based on the crystal defect theory is proposed to design the hafnium oxide based multi-bit nonvolatile logic devices (NLD). The designed devices are demonstrated to exhibit both multi-bit computing and self-data storage functions. Innovative operation schemes are developed to achieve the functions of computing and data storage on the NLD. A two-bit nonvolatile adder is demonstrated based on the NLD, indicating the potential application of the designed NLD for complex functions and higher density integration in a simple system.