Favorable ultraviolet photoelectric effects in TbMnO3/Nb–SrTiO3 heterostructures

• Maximum photovoltaic values of heterostructure irradiated by 365 nm (2.6 mW/mm2) and 248 nm (0.71 mJ/mm2) lights are about 0.121 V and 0.119 V, respectively.
• Ideality factors and the diffusion voltages obtained from the current–voltage curves nonlinearly decrease with increasing the temperature.
• Fitting parameters (β and τk) of the relaxation in the falling process decrease with increasing the power intensity.

The rectifying properties and ultraviolet photoelectric effects in TbMnO3/Nb-doped SrTiO3 heterostructures have been investigated. The ideality factors and the diffusion voltages obtained from the current–voltage curves nonlinearly decrease with increasing the temperature. It is observed that the maximum photovoltaic values of the heterostructure irradiated by the 365 nm (2.6 mW/mm2) and 248 nm (0.71 mJ/mm2) lights are about 0.121 V and 0.119 V at T=300 K, respectively. The relations between the relaxation of photovoltages after the irradiation and the power intensity are revealed. These results suggest the potential applications in the development of ultraviolet detectors using oxides-based heterostructures.