کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1591795 | 1515605 | 2014 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Band offsets in c-Si/Si-XII heterojunctions Band offsets in c-Si/Si-XII heterojunctions](/preview/png/1591795.png)
• Ab initio characterization of a potentially novel device for solar applications.
• Estimate band offsets formed at the c-Si/Si-XII heterojunction.
• Analyze convergence of Tersoff׳s method for determining the charge neutrality level.
Silicon has a rich phase diagram with a multitude of phases existing over a wide range of pressures and temperatures, in addition to the common cubic silicon (c-Si) phase. One such phase, Si-XII, was first observed less than 2 decades ago in diamond anvil experiments, and more recently as a product of nanoindentation. In some of these latter experiments, I–V measurements were performed to characterize the c-Si/Si-XII interface that results when Si-XII is formed in cubic silicon substrates. In this paper we describe calculations of the band offsets in c-Si/Si-XII heterojunctions. We find that the heterojunction is of Type I and that the band offsets are estimated to be ΔEv=0.3eV and ΔEc=0.5eV for the valence bands and conduction bands, respectively.
Journal: Solid State Communications - Volume 191, August 2014, Pages 6–9