کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1591805 | 1515605 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic properties of armchair graphene nanoribbons with BN-doping
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic properties of armchair graphene nanoribbons with BN-doping Electronic properties of armchair graphene nanoribbons with BN-doping](/preview/png/1591805.png)
چکیده انگلیسی
Using the first-principles calculations based on density functional theory, we investigated the electronic properties of armchair graphene nanoribbons (AGNRs) with boron nitrogen (BN) doping. The B and N impurities can adjust the electronic properties of the AGNRs, whose features strongly depend on the impurity types and the ribbon width of the AGNRs. Interestingly, with the increase of the ribbon width, the energy gap of the AGNRs with B/N pair doping is oscillatory. The AGNRs with B or N doping show metallic behavior, and the localized unsaturated electronic states on the edge atoms lead to magnetism. These unconventional doping effects could be used to design semiconductor electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 191, August 2014, Pages 59-65
Journal: Solid State Communications - Volume 191, August 2014, Pages 59-65
نویسندگان
L.N. Chen,