Temperature dependence of dynamic hysteresis behavior in Pb0.4Sr0.6TiO3 ferroelectric films

• Temperature dependence of dynamic hysteresis is investigated in low temperature crystallized Pb0.4Sr0.6TiO3 thin films.
• Temperature scaling function takes the different forms divided by a transition region of 190–225 K.
• The effect of thermal activated de-freezing of domain wall and dielectric response of defects with applied electric field.

The temperature (T) dependence of dynamic hysteresis behavior is investigated in low temperature crystallized Pb0.4Sr0.6TiO3 thin films between 85 K and 340 K. It was found that the temperature scaling relations for hysteresis area 〈A〉, remnant polarization Pr and coercive field Ec take the different forms in two different temperature regions divided by a transition region ranging from 190 K to 225 K and the 〈A〉, Pr and Ec decreased in the first region and increased in the second region with increasing T. The different scaling relations can be predicted by the effect of thermal activated de-freezing of domain wall and dielectric response of defects with applied electric field. Moreover, the effect of substrate temperature on the dynamic hysteresis behavior versus T is also investigated.