کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1591851 1515598 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Control of Majorana edge modes by a g-factor engineered nanowire spin transistor
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Control of Majorana edge modes by a g-factor engineered nanowire spin transistor
چکیده انگلیسی


• Manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor.
• Large (small) g-factor semiconductors that form the topological (non-topological) regions in the nanowire heterostructure.
• The hybridization of edge states results in spin currents and 4π-periodic torques.
• Relations between torques and spin-currents are established.

We propose the manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor. The spin transistor is based on a heterostructure nanowire comprising of semiconductors with large and small g-factors that form the topological and non-topological regions respectively. The hybridization of bound edge states results in spin currents and 4π-periodic torques, as a function of the relative magnetic field angle – an effect which is dual to the fractional Josephson effect. We establish relation between torques and spin-currents in the non-topological region where the magnetic field is almost zero and spin is conserved along the spin–orbit field direction. The angular momentum transfer could be detected by sensitive magnetic resonance force microscopy techniques.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 198, November 2014, Pages 66–70
نویسندگان
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