Wide bandgap engineering of (GaIn)2O3 films

• Crystalline (GaIn)2O3 films were successfully obtained in the wide composition range.
• The indium content in the (GaIn)2O3 films can be controlled by changing the element composition in the targets.
• The bandgap of the (GaIn)2O3 films can be tailored from 3.8 eV to 5.1 eV.

(GaIn)2O3 films were deposited on (0001) sapphire substrates by means of pulsed laser deposition (PLD). The crystal structure and optical properties of the films have been systematically investigated by means of Energy Dispersive Spectroscopy (EDS), X-ray diffraction and spectrophotometer. EDS results show that films with different indium contents (x) can be obtained by controlling the element composition in the targets. Single phase (GaIn)2O3 films were successfully obtained in the wide composition ranges, although the films with indium content between 0.16 and 0.33 exhibited double phases. Optical analysis indicates that the bandgap of the (GaIn)2O3 films can be tailored from 3.8 eV to 5.1 eV by controlling the indium content (x), indicating that PLD is a promising growth technology for growing bandgap tunable crystalline (GaIn)2O3 films.